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| Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 0.2+0.1 -0.05 Unit: mm 0.15+0.1 -0.05 s Features q q q 3 Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 5 0.80.1 1.60.15 1 1 (0.5) (0.5) 1.00.1 1.60.1 2 (0.4) (0.3) s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25C) Ratings 30 20 5 30 125 125 -55 ~ +125 Unit V V V mA mW C C 1:Base 2:Emitter 3:Collector 0 to 0.1 0.450.1 EIAJ:SC-75 SSMini3-G1 Package Marking symbol : V s Electrical Characteristics Parameter Collector cutoff current Forward current transfer ratio Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance (Ta=25C) Symbol ICBO hFE* fT NF Zrb Cre Conditions VCB = 10V, IE = 0 VCB = 10V, IE = -1mA VCB = 10V, IE = -1mA, f = 200MHz VCB = 10V, IE = -1mA, f = 5MHz VCB = 10V, IE = -1mA, f = 2MHz VCB = 10V, IE = -1mA, f = 10.7MHz 70 150 250 2.8 22 0.9 4 50 1.5 min typ max 0.1 220 MHz dB pF Unit A *h FE Rank classification Rank hFE Marking Symbol B 70 ~ 140 VB C 110 ~ 220 VC 472 0.750.15 0.20.1 Transistor PC -- Ta 150 12 Ta=25C 125 10 IB=100A 12.5 2SC4626 IC -- VCE 15.0 VCE=10V Ta=25C IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 100 8 80A Collector current IC (mA) 9 10.0 75 6 60A 7.5 50 4 40A 5.0 25 2 20A 2.5 0 0 20 40 60 80 100 120 140 160 0 0 3 6 0 0 20 40 60 80 100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IB -- VBE 120 VCE=10V Ta=25C 100 50 60 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 VCE=10V VCE(sat) -- IC IC/IB=10 Collector current IC (mA) Base current IB (A) 80 40 Ta=75C 30 25C -25C 60 40 20 Ta=75C 25C 0.1 -25C 0.03 0.01 0.1 20 10 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 240 VCE=10V 400 350 300 250 200 150 100 50 0 0.1 0 - 0.1 - 0.3 fT -- I E 60 Zrb -- IE Reverse transfer impedance Zrb () VCB=10V f=100MHz Ta=25C VCB=10V f=2MHz Ta=25C Forward current transfer ratio hFE 200 Transition frequency fT (MHz) 50 160 Ta=75C 25C 40 120 -25C 80 30 20 40 10 0.3 1 3 10 30 100 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 -1 -3 -10 Collector current IC (mA) Emitter current IE (mA) Emitter current IE (mA) 473 Transistor Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 3.0 f=10.7MHz Ta=25C 2.5 20 24 2SC4626 PG -- IE VCE=10V f=100MHz Ta=25C 12 VCB=6V f=100MHz Rg=50 Ta=25C NF -- IE 10 2.0 IC=3mA 1.5 1mA 16 Noise figure NF (dB) -1 -3 -10 -30 -100 Power gain PG (dB) 8 12 6 1.0 8 4 0.5 4 2 0 0.1 0.3 1 3 10 30 100 0 - 0.1 - 0.3 0 - 0.1 - 0.3 -1 -3 -10 Collector to emitter voltage VCE (V) Emitter current IE (mA) Emitter current IE (mA) bie -- gie 24 0 bre -- gre Reverse transfer susceptance bre (mS) Forward transfer susceptance bfe (mS) Vie=gie+jbie VCE=10V yre=gre+jbre VCE=10V f=10.7MHz 0 - 0.1mA bfe -- gfe f=10.7MHz 58 10.7 -1mA 100 Input susceptance bie (mS) 20 -4mA 16 IE=-1mA - 0.1 IE=-1mA -20 58 -2mA 100 -7mA 100 -2mA 58 - 0.2 -40 12 - 0.3 58 -60 IE=-4mA 100 58 8 - 0.4 100 -80 4 f=10.7MHz - 0.5 -100 yfe=gfe+jbfe VCE=10V 0 20 40 60 80 100 0 0 8 16 24 32 40 - 0.6 - 0.5 -120 - 0.4 - 0.3 - 0.2 - 0.1 0 Input conductance gie (mS) Reverse transfer conductance gre (mS) Forward transfer conductance gfe (mS) boe -- goe 1.2 yoe=goe+jboe VCE=10V Output susceptance boe (mS) 1.0 0.8 IE=-1mA 100 0.6 58 0.4 0.2 f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5 Output conductance goe (mS) 474 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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